? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 rev. v3 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ma4e2037, ma4e2038, ma4e2039, ma4e2040 gaas beam lead schottky diodes features ? low series resistance ? low capacitance ? high cut-off frequency ? silicon nitride passivation ? multiple configurations description and applications m/a-com?s ma4e2037 and ma4e2038 single diodes, ma4e2039 anti-parallel pair and ma4e2040 series tee are gallium arsenide beam lead schottky barrier diodes. these devices are fabricated on omcvd epitaxial wa- fers using a process designed for high device uniformity and extremely low parasitics. the high carrier mobility of gallium arsenide results in lower series resistance than a silicon schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. the diodes are fully passivated with silicon nitride and have an addi- tional layer of a polymer for scratch protection. the pro- tective coatings prevent dam age to the junction and the anode air bridge during handling. applications the high cut-off frequency of these diodes allows use through millimeter wave frequencies. typical applica- tions include single and double balanced mixers in pcn transceivers and radios, automotive radar systems and police radar detectors. the ma4e2039 anti-parallel pair is designed for use in sub harmonically pumped mixers. close matching of the diode characteristics in high lo suppression at the rf input. ma4e2037, ma4e2038 ma4e2039 ma4e2040 notes : ( unless otherwise specified ) 1. dimensions are in mm (inches). 2. views are with junction side up.
? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 rev. v3 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ma4e2037, ma4e2038, ma4e2039, ma4e2040 gaas beam lead schottky diodes electrical specificati ons @ + 25 c (measured as single diodes) parameters and test conditions symbol units ma4e2037 ma4e2038 min. typ. max. min. typ. max. junction capacitance at 0v at 1 mhz cj pf .020 .015 total capacitance at 0v at 1 mhz 1 ct pf .030 .045 .060 - .035 .045 junction capacitance difference dcj pf series resistance at +10ma 2 rs ohms 4 7 6.5 10 forward voltage at +1ma vf1 volts .60 .70 .80 .60 .70 .80 forward voltage difference at 1ma dvf volts reverse breakdown voltage at -10ua vbr volts 4.5 7 4.5 7 notes: 1. total capacitance is equivalent to the sum of junction capacitance cj and parasitic capacitance cp. 2. series resistance is determined by m easuring the dynamic resistance and subtract ing the junction resistance of 2.6 ohms. 3. capacitance for the ma4e2039 and ma4e2040 is per schottky diode. parameters and test conditions symbol units ma4e2039 ma4e2040 min. typ. max. min. typ. max. junction capacitance at 0v at 1 mhz cj pf .020 3 .020 3 total capacitance at 0v at 1 mhz 1 ct pf .030 3 .045 3 .060 3 .030 3 .045 3 .060 3 junction capacitance difference dcj pf .005 .010 .005 .010 series resistance at +10ma 2 rs ohms 4 7 4 7 forward voltage at +1ma vf1 volts .60 .70 .80 .60 .70 .80 forward voltage difference at 1ma dvf volts .005 .010 .005 .010 reverse breakdown voltage at -10ua vbr volts
? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 rev. v3 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ma4e2037, ma4e2038, ma4e2039, ma4e2040 gaas beam lead schottky diodes forward current vs temperature 0.00 0.01 0.10 1.00 10.00 100.00 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 forward voltage (v) forward current (ma) absolute maximum ratings 1 parameter absolute maximum operating temperature -65 c to +125 c storage temperature -65 c to +150 c incident lo power +20 dbm incident rf power +20 dbm . mounting temperature +235c for 10 seconds electrostatic dischar ge ( esd ) classification 2 class 0 1. operation of this device above any one of these parameters may cause permanent damage. 2. human body model +125c 25c - 50c
? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 rev. v3 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ma4e2037, ma4e2038, ma4e2039, ma4e2040 gaas beam lead schottky diodes handling procedures the following precautions should be obser ved to avoid damaging these chips: cleanliness: the chips should be handled in a clean environment. do not attempt to clean die after installation. static sensitivity: schottky barrier diodes are esd s ensitive and can be damaged by static electricity. proper esd tec hniques should be used when handling these devices. general handling: the protective polymer c oating on the active areas of these die provides scratch protection, particularly for the metal air bridge wh ich contacts the anode. beam lead devices must, how ever, must be handled with care since the leads may be easily distorted or broken by the normal pressures exerted when handled by tweezers. a vacuum pencil with a # 27 tip is recommended for picking and placing. mounting techniques these devices are designed to be inserted onto hard or soft substrates. recommended methods of attachment include thermo-compression bonding, parallel- gap we lding, solder reflow and conductive epoxy. see application note m541, ? bonding and handling procedures for chip diode devices ? for detailed instruc- tions.
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